Spin-polarized magneto-electronic properties in buckled monolayer GaAs

Electronic properties of a pristine and NH3/NO2 adsorbed buckled arsenene monolayer

Analogous to exfoliated 2D sheets of black phosphorene, arsenene is an atomically thin layer of the arsenic crystal. In this paper, we investigate the sensitivity of a pristine arsenene sheet for NH3 and NO2molecules in terms of binding energy, nature of bonding, density of states and current–voltage characteristics. The calculated results based on density functional theory find that both NH3 a...

Photoemfssion of spin - polarized electrons from GaAs

The spin polarization of electrons photoemitted from (110) GaAs by irradiating with circularly polarized light of energy 1.5 & heu & 3.6 eU was measured by Mott scattering. The GaAs surface was treated with cesium and oxygen to obtain a negative electron af6nity (NEA), The spectrum of spin polarization P(hem) exhibits a peak (P = 40%) at threshold arising from transitions at I, and positive (P ...

Spin-polarized tunneling with GaAs tips in scanning tunneling microscopy.

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Buckled Ribbons of GaAs for Flexible Electronics

Magneto-electronic properties of multilayer graphenes.

This article reviews the rich magneto-electronic properties of multilayer graphene systems. Multilayer graphenes are built from graphene sheets attracting one another by van der Waals forces; the magneto-electronic properties are diversified by the number of layers and the stacking configurations. For an N-layer system, Landau levels are divided into N groups, with each identified by a dominant...